Proton Radiation Damage in P-Channel CCDs Fabricated on High-Resistivity Silicon
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چکیده
P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1× 1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark curent were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions. Keywords— CCD, High Resistivity Silicon, Radiation Damage.
منابع مشابه
A Comparative Study of Proton Radiation Damage in p- and n- Channel CCDs
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تاریخ انتشار 2001